【Device Papers】Design, Simulation, and Comparison of p-GaN-based β-Ga₂O₃ FET on Wide Bandgap Substrates

      Researchers from the Dr B.R. Ambedkar National Institute of Technology Jalandhar have published a dissertation titled "Design, Simulation, and Comparison of p-GaN-based β-Ga₂O₃ FET on Wide Bandgap Substrates" in Semiconductors.

Abstract

      β-Ga₂O₃ and diamond, emerging wide bandgap semiconductors, hold promise as alternatives to GaN and SiC in the next generation of power devices due to their exceptional material properties. In this paper, the focus is on evaluating the analog performance of a p-GaN-based β-Ga₂O₃ FET on various wide bandgap materials as substrates, including GaN, β-Ga₂O₃, and diamond. The p-GaN layer provides a robust and stable threshold voltage, minimizing gate leakage issues that can arise in Schottky gate structures used in conventional β-Ga₂O₃ devices. The research compares the outcomes obtained from different substrate materials and investigates the impact of gate length and work function variations on device performance. The diamond-based FET provides 1.19 V and 1.49 × 10¹² threshold voltage and I_on/I_off, respectively. Key parameters such as transfer characteristics, transconductance, total capacitance is analyzed to highlight their suitability for high-performance analog applications.

DOI：

https://doi.org/10.1134/S1063782624602152