【Epitaxy Papers】Homoepitaxial growth of thick Si-doped β-Ga₂O₃ layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

      Researchers from the Tokyo University of Agriculture and Technology have published a dissertation titled "Homoepitaxial growth of thick Si-doped β-Ga₂O₃ layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy" in Applied Physics Express.

Abstract

      By using tetramethylsilane (TMSi) as a Si dopant source, thick intentionally Si-doped β-Ga₂O₃ homoepitaxial layers were grown by low-pressure hot-wall metalorganic vapor phase epitaxy. The Si concentration was linearly controlled by varying the TMSi supply, and a RT electron density nearly equal to the Si concentration was achieved in the range from 1.8 × 10¹⁶ to 1.3 × 10¹⁹ cm^–3. For the layer with a Si concentration and RT electron density of 1.8 × 10¹⁶ cm^–3, the RT electron mobility of 136 cm² V^–1 s^–1 was found to be limited by polar optical phonon scattering.

DOI：

https://doi.org/10.35848/1882-0786/adcfee