【Member News】Fujia Gallium Chairman Qi Hongji Joins Shanghai WBG&UWBG Semiconductor Industry Forum to Promote Industrial Ecology Development

      On May 12th, the 2025 Shanghai Wide Band Gap and Ultra-Wide Band Gap Semiconductor Industry Innovation and Development Forum was grandly launched in the Lingang New Area. This grand event attracted authoritative experts and representatives from the research, industry, and financial sectors to gather together, jointly offering suggestions for the cutting-edge technological innovation and future industrial development of ultra-wide band gap semiconductors. Qi Hongji, co-director of the Shanghai Key Laboratory of Wide Band Gap and Ultra-Wide Band Gap Semiconductor Materials and chairman of Hangzhou Fujia Gallium Technology Co., LTD., attended and participated in the exchange as an industry expert and representative of leading enterprises, which has attracted widespread attention.

      At the forum, several important measures taken by Shanghai to take the lead in systematically laying out the ultra-wide band gap semiconductor industry were simultaneously implemented: The future industry cluster area was officially launched in the Lingang New Area; The Shanghai Key Laboratory of Wide Band Gap and Ultra-Wide Band Gap Semiconductor Materials was officially inaugurated; The Lingang New Area released supportive policies; Proof of Concept Center and Industrial Fund Matrix were officially launched； The Ultra-Wide Band Gap Semiconductor Innovation and Development Alliance was initiated and established. Qi Hongji attended the alliance's launch ceremony as a representative of the first batch of initiating units of The Ultra-Wide Band Gap Semiconductor Innovation and Development Alliance.

      During the sharing session, experts from various fields such as Zhang Long, Wang Qingyu, Qin Xi, Zhu Jiaqi, Qi Hongji, Liang Qing, and Li Sihua of Sinan engaged in in-depth exchanges. Jointly explore how Shanghai can take the lead in building a future industrial highland for ultra-wide band gap semiconductors in the world. Qi Hongji shared a series of influential achievements that Fujia Gallium has made internationally in technological research and development of Gallium Oxide single crystal and epitaxial materials, as well as the practical experience accumulated in connecting the upstream and downstream links of Gallium Oxide and promoting industrialization, providing new ideas for the development of the industry.

      In the future, Fujia Gallium will continue to support the alliance's work, make its own contribution to promoting industry, education and research cooperation and the coordinated development of the Gallium Oxide industry chain, and jointly open a new chapter in the ultra-wide band gap semiconductor industry ecosystem with industry, education and research partners.