【Device Papers】Self-powered solar-blind photodetectors based on AlN/a-Ga₂O₃ heterojunction with nanocolumnar structure on various substrates

      Researchers from the Shenzhen University have published a dissertation titled "Self-powered solar-blind photodetectors based on AlN/a-Ga₂O₃ heterojunction with nanocolumnar structure on various substrates" in CrystEngComm.

Abstract

      AlN/amorphous Ga₂O₃ heterojunction photodetectors were fabricated to achieve solar-blind UV detection. The responsivity and detectivity of the photodetector on the native substrate are 150% and 21.8% higher than those on the heterogeneous substrate at a 20 V bias, reaching 8.31 A·W^-1 and 3.24×10¹⁴ Jones, respectively. The built-in electric field enables self-powered UV detection without external power supply. The addition of nanocolumnar AlN structure significantly improved the performance of the photodetector, achieving a photo-to-dark current ratio and responsivity up to 2.11×10⁷ and 9.17 mA·W^-1 at 0 V bias. The fabricated photodetector has demonstrated self-powered and high-sensitivity UV detection.

DOI：

https://doi.org/10.1039/D4CE00826J