【Device Papers】Effects of NiO Doping and Trench Wall Tilt on Ga₂O₃ PiN Diodes Performance

      Researchers from the Kwangwoon university have published a dissertation titled "Effects of NiO Doping and Trench Wall Tilt on Ga₂O₃ PiN Diodes Performance" in Microelectronics Journal.

Abstract

      Gallium Oxide (Ga₂O₃) is a promising material for next-generation power semiconductors due to its wide bandgap (∼4.9 eV), high Baliga’s figure of merit (FOM) (3444 W/cmK), and high breakdown field (E_c, 8 MV/cm). To achieve high blocking and low leakage current, research has been conducted on PN heterojunctions and bevel structures. In this paper, we performed simulations using Sentaurus TCAD to investigate the impact of NiO doping concentration and NiO’s trench tilt angle on the electrical characteristics of NiO/Ga₂O₃ PiN diodes with trench NiO. As the NiO doping concentration increased, the resistance decreased from 21.5 to 7.5 mΩcm², and we observed the expansion of depletion from NiO to the NiO/Ga₂O₃ interface. Furthermore, we confirmed a reduction in resistance and a change in breakdown voltage with an increase in NiO trench tilt. By understanding the optimal angle to mitigate the concentration of high electric fields in the edge region, we anticipate the fabrication of stable Ga₂O₃ PiN diodes.

DOI：

https://doi.org/10.3390/s24175822