论文分享
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【国际论文】Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga₂O₃
[ 2023-03-02 ] -
【国际论文】A1.86-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode
[ 2023-03-02 ] -
【国际论文】2.44kV Ga₂O₃ vertical trench Schottky barrier diodes with very low reverse leakage current
[ 2023-03-02 ] -
【国际论文】2.32kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate
[ 2023-03-02 ] -
【国际论文】1.85kV Breakdown Voltage in Lateral Field-Plated Ga₂O₃ MOSFETs
[ 2023-03-02 ] -
【国际论文】Delay-time analysis in radio-frequency β-Ga₂O₃ field effect transistors
[ 2023-03-02 ] -
【国际论文】1.6kV Vertical Ga₂O₃ FinFETs With Source-Connected Field Plates and Normally-off Operation
[ 2023-03-02 ] -
【国际论文】1.5MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers
[ 2023-03-02 ] -
【国际论文】Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT
[ 2023-03-02 ] -
【国际论文】Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
[ 2023-03-02 ]
