Paper Sharing
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【Domestic Papers】High-quality heteroepitaxy of ε-Ga₂O₃ films on 4H-SiC substrates via MOCVD
[ 2024-08-01 ] -
【Domestic Papers】Hydrogen-assisted chemical vapor deposition for heteroepitaxial growth of pure ε-Ga₂O₃ films
[ 2024-08-01 ] -
【International Papers】Modeling temperature dependent Ni/β-Ga₂O₃ Schottky barrier diode interface properties
[ 2024-07-25 ] -
【International Papers】Growth of β-Ga₂O₃ crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method
[ 2024-07-25 ] -
【International Papers】Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga₂O₃ single crystal
[ 2024-07-25 ] -
【International Papers】Enhancement mode β-(Al₀.₁₉Ga₀.₈₁)₂O₃/Ga₂O₃ HFETs with superlattice back-barrier layer
[ 2024-07-25 ] -
【International Papers】Optical activity and phase transformations in γ/β Ga₂O₃ bilayers under annealing
[ 2024-07-25 ] -
【Domestic Papers】Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes
[ 2024-07-12 ] -
【International Papers】Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance
[ 2024-07-12 ] -
【Domestic Papers】Low-cost O₂ plasma activation assisted direct bonding of β-Ga₂O₃ and Si substrates in air
[ 2024-07-12 ]
