Paper Sharing
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【International Papers】Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions
[ 2024-12-31 ] -
【Substrate Papers】Surface structure of Sn doped β-Ga₂O₃ (010) p(1×1) studied by quantitative Low Energy Electron Diffraction
[ 2024-12-31 ] -
【Substrate Papers】Defect evolution and nitrogen incorporation in ion-implanted β-Ga₂O₃
[ 2024-12-31 ] -
【Substrate Papers】Research on Positron Annihilation Spectroscopy of Defect and Electrical Conductivity in Sn-Doped β-Ga₂O₃ Semiconductors
[ 2024-12-31 ] -
【Device Papers】Zr-Doping Strategy of High-Quality Cu₂O/β-Ga₂O₃ Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection
[ 2024-12-31 ] -
【Device Papers】High-performance solar-blind imaging photodetectors based on micrometer-thick β-Ga₂O₃ films grown by thermal oxidation of gallium
[ 2024-12-31 ] -
【Device Papers】Design of Ga₂O₃ Trench Gate MOSFET Devices with Dielectric Pillars
[ 2024-12-31 ] -
【International Papers】Phase-selective growth of κ- vs β-Ga₂O₃ and (InₓGa₁₋ₓ)₂O₃ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
[ 2024-12-30 ] -
【International Papers】Observation of temperature-dependent capture cross section for main deep-levels in β-Ga₂O₃
[ 2024-12-30 ] -
【Epitaxy Papers】24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga₂O₃ grown by mist chemical vapor deposition
[ 2024-12-30 ]
