News Trends
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【Domestic News】Institute of Nuclear Energy Safety Technology Has Made New Progress in the Development of Semiconductor Radiation Detectors for Ultra-Wide Bandgap Materials
[ 2025-01-10 ] -
【World Express】How NREL's Explores the Ultra-Wide Bandgap Materials for More Efficient LEDs and Power Electronics
[ 2025-01-08 ] -
【Domestic News】Research Advancement of Gallium Oxide Materials -- Establishing Shanghai Key Laboratory of Wide Bandgap and Ultra-Wide Bandgap Semiconductor Materials
[ 2025-01-08 ] -
【World Express】FURI Project Supports College Research to Improve Wide Bandgap Semiconductor sustainability
[ 2025-01-06 ] -
【World Express】Gallium Oxide Heterojunction Diode Demonstrates Avalanche and Surge Robustness
[ 2024-12-31 ] -
【Domestic News】Intelligent Collision: Academic Exchanges Accelerate Breakthroughs in Gallium Oxide Materials
[ 2024-12-30 ] -
【World Express】Germany Joint Project “ForMikro-GoNext”: Progress in Power Electronics with Beta-Gallium Oxide
[ 2024-12-26 ] -
【World Express】New Strategy Enhances 2D Transistor Dielectric Layers —— Blaze a New Trail for Device Development
[ 2024-12-20 ] -
【World Express】FLOSFIA, Announced Recent Plans and Technical Achievements for Ga₂O₃ Semiconductor Devices
[ 2024-12-19 ] -
【World Express】Research from Nuclear Microanalysis Lab on Ultra-Wide Bandgap Semiconductor Gallium Oxide
[ 2024-12-11 ]
