News Trends
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【World Express】The Institute of Production Technology of the University of Tokyo has developed a nano-thin film oxide semiconductor transistor using the atomic layer stacking method
[ 2023-07-18 ] -
【Domestic News】Professor Qian Kai's Team of Shandong University has Made New Achievement in the Research of 2D Gallium Oxide Neuromorphic Memristors Chip
[ 2023-07-07 ] -
【Industry News】Gallium oxide—— at the beginning of displaying its talent
[ 2023-06-30 ] -
【Industry News】Setting Sail, Gallium Oxide
[ 2023-06-02 ] -
【World Express】FLOSFIA Successfully developed the world's first corundum gallium oxide SBD with ampere grade and 1700V withstand voltage level
[ 2023-05-26 ] -
【World Express】Fuji Economy in Japan Predicts that the World Power Semiconductor Market will Reach about 693.9 Billion yuan(￥) by 2035
[ 2023-05-06 ] -
【Industry News】the Research Heat of Gallium Oxide Materials Continues to Heat up
[ 2023-04-28 ] -
【Domestic News】Contribution on Patent to Semiconductor Materials in Chinese Mainland in 2022
[ 2023-04-28 ] -
【World Express】FLOSFIA and JSR Progress Toward Practical use of the World's First P-type Semiconductor, Iridium Gallium Oxide -- Development of New Iridium-Based Film Formation Materials for Mass Production Creates A Solution for Realizing the Ultimate SEMI Ecology™
[ 2023-04-23 ] -
【World Express】FLOSFIA Solved the Problem of the P-layer of Gallium Oxide
[ 2023-04-23 ]
