【Member Papers】Research team from the Fudan University has conducted a review on β-Ga₂O₃ power diodes

      Researchers from the Fudan University have published a dissertation titled "A Review of β-Ga₂O₃ Power Diodes " in Materials.

Abstract

      As the most stable phase of gallium oxide, β-Ga₂O₃ can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga’s figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga₂O₃ limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga₂O₃ power diodes and gives a brief introduction to their thermal management and circuit applications.

Figure 1. Transformation relationships between different crystal phases of β-Ga₂O₃

Figure 2. Schematic representation of β-Ga2O3 (a) crystal structure and (b) unit cell

Figure 3. Schematic energy band diagrams of a metal/β-Ga₂O₃ Schottky contact: (a) before contact and (b) after contact

Original link: https://doi.org/10.3390/ma17081870