【Member News】Groundbreaking Ceremony Held for GAO Semiconductor’s Gallium Oxide Industrial Base in Chizhou, Anhui

      On June 8, the groundbreaking ceremony for the Gallium Oxide R&D and Manufacturing Integrated Base of GAO Semiconductor was grandly held in the Chizhou Economic and Technological Development Zone, Anhui Province.

      The official launch of this project marks a pivotal step in GAO Semiconductor’s industrialization strategy in Anhui and signals the beginning of a new phase of expansion. Driven by iterative innovation, focused on cultivating new quality productive forces, and guided by a cluster-based development approach, the project is expected to strongly support the high-quality advancement of the regional gallium oxide semiconductor industry. It will also inject fresh momentum into enhancing the independence, resilience, and security of the semiconductor industry chain and supply chain across the Yangtze River Delta region.

Strategic Industrialization Layout

      As a landmark project in the company’s strategic upgrade, the Gallium Oxide Semiconductor Integrated Base established in the Chizhou Economic and Technological Development Zone serves as the core platform for GAO Semiconductor’s industrialization strategy. The project is aligned with industry development trends and focused on the advanced semiconductor manufacturing sector.

      Integrating chip R&D, pilot-scale testing, mass production, and technology commercialization, the base is dedicated to the development and manufacturing of gallium oxide semiconductor chips based on specialized process technologies. It is expected to help address the shortage of mid- to high-end semiconductor production capacity in the region.

      Unlike conventional projects focused solely on either manufacturing or research, the base adopts a full-chain industrial model featuring R&D-driven innovation, production integration, and continuous technology iteration. This approach enables a closed-loop ecosystem encompassing technological development, product advancement, and market application. The project will further strengthen GAO Semiconductor’s core business portfolio, consolidate its position in the gallium oxide semiconductor sector, and accelerate the company’s transformation from a single-point operation model to a comprehensive, vertically integrated industrial ecosystem.

Expanding Production Capacity for High-Quality Growth

      The groundbreaking of this new base marks a significant milestone in GAO Semiconductor’s continued commitment to the semiconductor industry and its strategy for high-quality, expansion-driven growth. Leveraging the well-established industrial ecosystem, talent resources, and policy support available in the Chizhou Economic and Technological Development Zone, the company is moving beyond the traditional model of simply increasing production capacity. Instead, it is pursuing a development path guided by technological innovation and market demand, enabling comprehensive expansion across production scale, technology capabilities, product portfolio, and market reach.

      On one hand, the base will significantly increase production capacity for large-diameter, high-end semiconductor chips, supporting growing demand from sectors such as new energy, smart devices, industrial automation, and consumer electronics. This expansion will broaden the company’s business scope and strengthen its competitive position in the market.

      On the other hand, the new facility will serve as an open industrial collaboration platform, fostering deeper cooperation with upstream and downstream partners, research institutions, and industry organizations. By facilitating the integration of key resources—including technology, talent, supply chains, and market channels—the project aims to create synergies across the value chain, driving both business growth and industrial value creation while opening a new chapter of large-scale, high-end, and international development for the company.

Driving Innovation Through Continuous Technology Advancement

      GAO Semiconductor’s core strength lies in its advanced R&D and manufacturing capabilities, which have enabled the company to remain at the forefront of the gallium oxide semiconductor industry. The newly established large-scale manufacturing base moves beyond conventional production models by leveraging cutting-edge semiconductor process technologies and building a specialized, intelligent, and highly refined innovation ecosystem.

      The facility will focus on key technological breakthroughs across the entire value chain, including semiconductor materials, chip design, specialty process manufacturing, and packaging and testing. Through continuous process optimization, product enhancement, and technology iteration, the company aims to address common industry challenges and overcome critical technological bottlenecks in strategic niche areas.

      At the same time, the base will establish a long-term innovation and iteration mechanism. Supported by in-house R&D teams and an integrated industry–academia–research collaboration network, it will be able to respond rapidly to evolving market demands, emerging technologies, and product upgrade requirements. By continuously advancing technologies, refreshing product offerings, and optimizing manufacturing processes, GAO Semiconductor seeks to transform innovation into a sustainable growth engine, accelerating its transition from scale-driven expansion to innovation-led, high-quality development and setting a benchmark for technological advancement within the industry.

Unleashing New Quality Productive Forces

      The implementation of this project will precisely cultivate and unlock new quality productive forces within the semiconductor sector, thereby reshaping the industrial capacity of high-end manufacturing in the region. As a high-end integrated circuit intelligent manufacturing initiative, the base will fully adopt intelligent production equipment, digital management systems, and green manufacturing processes, driving the transformation of semiconductor production toward higher precision, greater intelligence, improved efficiency, and enhanced sustainability.

      Through breakthroughs across four key dimensions—technological innovation, equipment upgrading, process transformation, and talent aggregation—the project is expected to significantly improve chip manufacturing precision, yield rate, and production efficiency, while reducing energy consumption and overall production costs. This will establish a new production system that is innovation-driven, technology-centric, and intelligently supported.

      This new production model, technological framework, and industrial structure will comprehensively unleash the vitality of new quality productive forces, accelerate the upgrading of the regional manufacturing sector, and provide robust support for the high-quality development of the real economy.

Driving Clustered Industrial Development

      Anchored in the broader regional industrial development strategy, this project will significantly promote clustered growth and foster a symbiotic and mutually reinforcing semiconductor ecosystem. As a key hub for high-end manufacturing, the Chizhou Economic and Technological Development Zone has already established a solid foundation in electronics and advanced manufacturing industries.

      The establishment of the GAO Semiconductor base will leverage its role as a leading anchor project, creating strong spillover and catalytic effects. Centered on core chip R&D and manufacturing, the project is expected to attract high-quality upstream and downstream enterprises across the semiconductor value chain, including materials, key components, equipment support, and end-use applications. This will help address existing gaps in the regional integrated circuit industry chain, extend industrial linkages, and enhance the overall ecosystem.

      Through a development model driven by leading enterprises, extended value chains, clustered supporting industries, and ecosystem co-construction, a semiconductor industrial cluster characterized by core leadership, multi-point support, coordinated synergy, and comprehensive upgrading will gradually take shape. This will enhance the scale, integration, and specialization of the regional integrated circuit industry, and support the Chizhou Economic and Technological Development Zone in becoming a highland for advanced semiconductor industry clustering.

Embarking on a New Journey, Building the Future of Chips

      GAO Semiconductor will advance the construction of the Chizhou base with high standards, high efficiency, and high quality, strictly controlling construction quality, progress, and safety, to ensure the project reaches completion and enters production as soon as possible.

      Looking ahead, the Chizhou base will serve as a new starting point for GAO Semiconductor to continue cultivating new-type productive forces and empowering clustered industrial development. By leveraging cutting-edge technology to strengthen the industrial foundation, utilizing advanced production capacity to support market expansion, and delivering high-quality products to meet industry needs, the company aims to drive the high-quality development of the gallium oxide semiconductor sector and contribute significantly to the region’s economic transformation and industrial upgrading.