【Device Papers】Thermal-Aware Compact Modeling and Design-Space Exploration of δ-Doped β-Ga₂O₃ MOSFETs for RF Power Electronics

      Researchers from Arizona State University have published a dissertation titled " Thermal-Aware Compact Modeling and Design-Space Exploration of δ-Doped β-Ga₂O₃ MOSFETs for RF Power Electronics " in 2026 27th International Symposium on Quality Electronic Design (ISQED).

Abstract

      β-Ga₂O₃ is an ultrawide-bandgap semiconductor with exceptional breakdown strength, high critical electric field, and scalability, making it a promising material for nextgeneration power and RF electronics. However, its intrinsically low thermal conductivity and strong self-heating effects remain major challenges to reliable operation. This work develops a physics-based compact model for β-Ga₂O₃ MOSFETs with deltadoped channel that is suitable for circuit-level simulation and design exploration. The model is calibrated using experimentally validated TCAD simulation results and captures key physical phenomena, including quantum confinement, electron centroid shift under bias, self-heating, and parasitic resistances. With a small set of physically meaningful parameters, the proposed model achieves geometry scalability and enables predictive simulation across a wide design space. Comprehensive validation against both TCAD and experimental data demonstrates excellent agreement for current-voltage (I-V) characteristics. The developed model provides a compact yet accurate framework for understanding electrothermal interactions in β-Ga₂O₃ devices and supports circuit designers in optimizing performance, efficiency, and reliability.

DOI：

https://doi.org/10.1109/ISQED69900.2026.11534727