【Member News】Major Breakthrough! Shandong SINOGa Valley Successfully Grows 6-Inch Twin-Free (001) Ga₂O₃ Single Crystal, Boosting the Quality Upgrade of the Ultra-Wide Bandgap Semiconductor Industry

      In the opening year of the 15th Five-Year Plan, another milestone has been achieved in the ultra-wide bandgap (UWBG) semiconductor field! Shandong SINOGa Valley Semiconductor Co., Ltd., following its successful industrialization of 4-inch Ga₂O₃ single crystals, has made another historic technological breakthrough. Leveraging two core proprietary innovations—Ga₂O₃ twin and typical defect suppression technology, and AI-driven automated batch crystal growth—SINOGa Valley employed an EFG method to successfully produce 6-inch 0-twin (001) Ga₂O₃ single crystals (Figure 1). Verified by authoritative domestic third-party testing institutions, these single crystals achieve a high-resolution XRD rocking curve full width at half maximum (FWHM) of 64.8 arcsec (Figure 2), reaching internationally leading crystal quality.

Figure 1: Growth of 6-inch 0-twin (001) Ga₂O₃ single crystal via crucible method

Figure 2: High-resolution XRD rocking curve FWHM

      As a core material of fourth-generation ultra-wide bandgap semiconductors, Ga₂O₃ boasts excellent high-voltage tolerance, high current capacity, low power loss, and radiation resistance. It holds vast application potential in data centers, UHV power transmission, new energy vehicles, smart grids, rail transit, high-power radar, and aerospace. The national 15th Five-Year Plan explicitly emphasizes accelerating the quality upgrade of the wide-bandgap semiconductor industry and promoting the industrialization of Ga₂O₃ and other UWBG materials. The successful growth of 6-inch 0-twin (001) Ga₂O₃ single crystals represents a major technological breakthrough, providing a solid material foundation for China to secure a strategic edge in future industries.

      This achievement is not merely a scale-up in size but a leap in crystal quality across both size and crystal plane. As a monoclinic crystal with low symmetry, Ga₂O₃ suffers from pervasive twin defects, which have historically forced the industry into a “grow large, cut small” approach and reliance on (100) Ga₂O₃ single crystals, limiting industrial applications. The (001) Ga₂O₃ single crystal, however, offers superior machinability and epitaxial quality, making it ideal for high-performance, high-reliability power electronic devices. By overcoming this global challenge, SINOGa Valley has produced 6-inch 0-twin (001) Ga₂O₃ single crystals, breaking the dual constraints of “twin defects” and “limited crystal planes.” This milestone places the company among the few worldwide capable of producing the full range of 2–6-inch 0-twin Ga₂O₃ single crystals.

      Looking ahead, SINOGa Valley will continue to adhere to its development philosophy of “quality first, innovation-driven.” The company will push the envelope in larger sizes, higher quality, and more diverse crystal planes while closely aligning with national strategic needs and terminal markets such as new energy and new infrastructure. By collaborating with upstream and downstream partners, SINOGa Valley aims to build an innovative full industry chain from “substrate–epitaxy–device–system–reliability.”

      With this breakthrough as a new starting point, SINOGa Valley will accelerate the integration and quality upgrade of China’s Ga₂O₃ semiconductor industry, contributing the strength of “SINOGa” to achieving high-level technological self-reliance.