【Patents】Domestic Companies Accelerate Positioning in Gallium Oxide: Shandong State-Owned Capital Investment and Tianyue Advanced Disclose Major Patents

      In recent years, as Gallium Oxide (Ga₂O₃) has attracted growing attention in the field of ultra-wide bandgap semiconductors, its application potential in power devices, deep-ultraviolet photodetectors, and high-temperature electronics has continued to expand, driving the industrial chain to further shift toward the material end.

      Among the key factors influencing device performance and industrialization, single-crystal growth quality and impurity control are widely regarded as critical issues. Efforts focusing on crystal purity, defect engineering, and growth process optimization are being actively accelerated by domestic enterprises.

      Recently, Shandong State-owned Capital Investment Holdings Group Co., Ltd. and Shandong Tianyue Advanced Technology Co., Ltd. have respectively disclosed patents related to impurity detection analysis in Ga₂O₃ single-crystal growth and low-impurity crystal growth methods. These developments further reflect the industry’s strong emphasis on core process technologies and material quality control in Gallium Oxide systems.

Shandong State-Owned Assets Investment Holdings Group: Impurity Detection and Analysis Method for Ga₂O₃ Single-Crystal Growth Based on Raman Spectroscopy

      Information from the China National Intellectual Property Administration shows that Shandong State-Owned Capital Investment Holdings Group Co., Ltd. has applied for a patent titled “An impurity detection and analysis method for Gallium Oxide (Ga₂O₃) single-crystal growth based on Raman spectroscopy” (publication number CN122045794A, filed in April 2026).

      The abstract indicates that the invention relates to semiconductor crystal inspection and analytical technologies. The method constructs an impurity tracing directed propagation graph based on a spatiotemporal Raman spectroscopy dataset with spatial coordinates, and further infers and filters candidate impurity migration pathways. It then integrates these results into a hierarchical impurity distribution and evolution network. After physical segmentation, impurity-dominated defect clusters are obtained, and cross-growth-cycle impurity concentration diffusion inversion is performed for each cluster to quantify impurity contribution weights. Finally, a structured analytical report is generated by combining a crystal growth process database.

      By leveraging spatiotemporal spectral data to establish impurity transport relationships, the method enables quantitative screening of migration pathways and refined inversion of defect clusters, allowing precise determination of impurity contributions at different growth stages. This provides a complete analytical framework for impurity detection in Gallium Oxide single-crystal growth.

Shandong Tianyue Advanced Technology: Low-Impurity Gallium Oxide Crystals and Their Growth Method

      On May 14, the China National Intellectual Property Administration disclosed that Shandong Tianyue Advanced Technology Co., Ltd. has applied for a patent titled “A low-impurity Gallium Oxide crystal and its growth method” (publication number CN122013320A, application number CN202610410657.8, published on May 12, 2026; filed on March 31, 2026).

      The inventors include Zhou Huiqin, Zhu Can, Dang Yifan, Chen Penglei, Liu Pengfei, Zhu Yonghai, Yin Guoxian, and Fan Zhipeng. The patent is classified under C30B29/16 and C30B11/00, and was filed through Beijing Junhui Intellectual Property Agency (partnership), with agent Xi Wei.

      The abstract indicates that the invention relates to Gallium Oxide crystal growth technology. The disclosed crystal features a total impurity density of ≤150 ppm, including ≤100 ppm for total precious metal impurities, ≤30 ppm for aluminum impurities, ≤30 ppm for zirconium impurities, and ≤1 ppm for iron impurities. The method aims to reduce impurity content in Ga₂O₃ crystals, thereby improving crystal quality and uniformity.