【Member News】Fujia Gallium Showcases Its Products at SEMICON CHINA 2026

      From March 25 to 27, 2026, SEMICON CHINA 2026—the world’s largest and most influential semiconductor industry exhibition—officially opened at the Shanghai New International Expo Centre.

      Hangzhou Fujia Gallium Technology Co., Ltd. (hereinafter referred to as “Fujia Gallium”), a board member of the Wide Bandgap Semiconductor Technology Innovation Alliance, made a high-profile appearance at the Alliance booth, showcasing a series of core Gallium Oxide products. During the exhibition, the company also officially unveiled the world’s first 12-inch Gallium Oxide single crystal, attracting significant attention from across the global semiconductor industry.

      The booth drew a constant stream of visitors, including research institutions, downstream enterprises, and industry experts from around the world. Fujia Gallium’s globally leading capability in large-diameter Gallium Oxide single-crystal growth, along with its vertically integrated strengths spanning equipment, materials, epitaxy, device fabrication, and validation, received strong recognition from industry professionals, many of whom expressed interest in further collaboration.

      SEMICON CHINA 2026 served not only as a key platform for Fujia Gallium to demonstrate its technological strengths and product portfolio, but also as an important opportunity to connect with global industry resources and expand partnerships. The strong on-site engagement reflects the growing industry focus on fourth-generation semiconductors, as well as recognition of Fujia Gallium’s technical capabilities and future potential.

      Looking ahead, Fujia Gallium will continue to uphold its vision of “bringing high-quality materials to the world,” further strengthening its position in the upstream Gallium Oxide supply chain, advancing core technologies, and delivering superior products and services to the industry. The company aims to seize early opportunities and play a leading role in the global competition for fourth-generation semiconductor technologies.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.