【Device Papers】Self-organized growth of Ga₂O₃ nanowire array deep-ultraviolet detectors in selected areas of sacrificial layer technology

      Researchers from the Beijing University of Technology have published a dissertation titled "Self-organized growth of Ga2O3 nanowire array deep-ultraviolet detectors in selected areas of sacrificial layer technology" in Chinese Physics B.

Abstract

      The fourth-generation wide-bandgap semiconductor gallium oxide (Ga₂O₃) nanowire ultraviolet (UV) detector offers several advantages, including high sensitivity, fast response speed, and a broad spectral response range covering the solar-blind UV band. However, due to the reletively weak selective growth of Ga₂O₃ nanowires on substrates, fabricating lateral-structured devices via self-assembly methods remains challenging. At present, most nanodevice architectures rely on vertically aligned arrays, which suffer from limitations such as a limited photosensitive area and difficulties in achieving large-scale planar arrays. Therefore, this work proposes a sacrificial-layer-assisted selective-area self-organized growth of Ga₂O₃ nanowires for the fabrication of deep-ultraviolet (DUV) detectors. Various metals and metal composites are employed as sacrificial layers, and the most suitable material is identified through systematic comparison. Utilizing this method, a solar-blind UV detector based on laterally bridged Ga₂O₃ nanowires is designed and fabricated. The device exhibits a light-to-dark current ratio of 8.7 under an incident optical power density of 2 mW/cm². Overall, the sacrificial layer technique facilitates the progression toward practical deployment and performance optimization of Ga₂O₃ nanowire-based planar devices. Furthermore, this technique can be extended to the fabrication of various Ga₂O₃ nanowire array devices, offering advantages such as low leakage current, negligible crosstalk, and high-density device integration.

DOI：

10.1088/1674-1056/ae4e85