Member News
【Member News】Multiple Alliance Members Attend IFWS 2025, Focusing on the Latest Advances in Ultra-Wide Bandgap Semiconductor Technology
日期：2025-11-19阅读：153
From November 11 to 14, the “The 11tth International Forum on Wide Baandgap Semiconductors & The 22nd China International Forum on Solid State Lighting (IFWS & SSLCHINA 2025)” was held in Xiamen, jointly organized by the China Advanced Semiconductor Industryinnovation Alliance (CASA), the China Solid State Lighting Alliance (CSA), and Xiamen University (XMU).
During the event, the “Ultra-Wide Bandgap Semiconductor Technology” sub-forum, co-supported by Shenzhen Pinghu Laboratory and Suzhou STR Software Technology Co.Ltd brought together experts from the industry chain, universities, research institutes, and leading companies to discuss the latest developments in depth. The sub-forum was jointly chaired by Hongwei Liang, Dean and Professor of the School of Integrated Circuits, Dalian University of Technology; Gang Wang, Professor at Sun Yat-sen University and Chief Scientist of Fujian Sunwise Semiconductor Technology Co., Ltd.; Tongjun Yu, Professor at Peking University; Qiang Li, Associate Professor at Xi’an Jiaotong University; and Hongliang Zhang, Professor at Xiamen University.
Guest Chairs
▶Hongwei Liang – Dean and Professor, School of Integrated Circuits, Dalian University of Technology
▶Gang Wang – Professor at Sun Yat-sen University, Chief Scientist at Fujian Jingxu Semiconductor Technology Co., Ltd.
▶Tongjun Yu – Professor, Peking University
▶Qiang Li – Associate Professor, Xi’an Jiaotong University
Presenting Speakers
▶Gang Wang, Chief Scientist of Fujian Sunwise Semiconductor Technology Co., Ltd. and Professor at Sun Yat-sen University, gave a keynote on “Heteroepitaxial Growth and Applications of Ga₂O₃ on Silicon Substrates.”
▶Jiandong Ye, Vice Dean and Professor, School of Electronic Science and Technology, Nanjing University (on behalf of the team), presented “Phase Regulation of Ga₂O₃ Semiconductors.”
▶Xianhu Zha, Researcher at Shenzhen Pinghu Laboratory, presented “Tuning the Electronic Band Structure of β-Ga₂O₃ and p-type Conductivity of β-(RhxGa₁-x)₂O₃ via Metal Doping.”
▶Hongwei Liang, Dean of the School of Integrated Circuits, Dalian University of Technology, presented “Boron Nitride Single-Crystal Neutron Detectors.”
▶Xuedong Bai, Researcher at the Institute of Physics, Chinese Academy of Sciences, presented “Epitaxial Growth of Single-Crystal Boron Nitride Thin Films.”
▶Qiang Li, Associate Professor at Xi’an Jiaotong University, presented “Flexible Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride.”
▶Yiming Shi, Researcher at the Institute of Semiconductors, Chinese Academy of Sciences, presented “Remote and van der Waals Epitaxy of β-Ga₂O₃ on Hexagonal Boron Nitride.”
▶Xiaotian Yang, Zhengzhou University, presented “Electronic and Optical Property Tuning Based on GaP/h-BN Heterostructures.”
▶Dengrui Zhao, Researcher at Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, presented “Flexible Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride.”
▶Tongjun Yu, Professor at Peking University, presented “Large-Area AlN Single-Crystal Growth and Iterative Optimization.”
▶Jicai Zhang, Professor at Beijing University of Chemical Technology, presented “HVPE Growth and Device Applications of Semi-Polar Aluminum Nitride Materials.”
▶Ning Jing, Professor at Xi’an University of Electronic Science and Technology, presented “Novel Heterostructures and Devices for Ultra-Wide Bandgap Semiconductors.”
▶Yingying Lin, Postdoctoral Researcher at Nagoya University, Japan, presented “Cathodoluminescence Study of Be Acceptor States in Aluminum Nitride.”
▶Xiaodong Zhang, Researcher at Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, presented “Heteroepitaxial Ga₂O₃ Films and High-Performance Ultraviolet Detectors.”
▶Hongliang Zhang, Professor at Xiamen University, presented “Epitaxial Ga₂O₃ Films and Electronic Structure at Interfaces.”
▶Hengyu Wang, Researcher at Zhejiang University, presented “Interface Engineering and Electric Field Modulation of Ga₂O₃ Power Devices.”
▶Ning Xia, CTO of Hangzhou Garen Semiconductor Co., Ltd., presented “Large-Area Ga₂O₃ Single-Crystal Growth and Defects.”
▶Ruoshi Peng, Researcher at Jiufengshan Laboratory, presented “Ga₂O₃ Trench Diode Device Study.”
▶Zhiqin Chu, Associate Professor at The University of Hong Kong, Academician of the Hong Kong Young Academy of Sciences, and Founder & Chief Scientist of DiamNEX, presented “Flexible Diamond Thin Films.”
▶Yiyun Zhang, Researcher at the Institute of Semiconductors, CAS, presented “Diamond Radiation Devices.”
▶Zeyang Ren, Professor at Xi’an University of Electronic Science and Technology, presented “Surface-Terminated Diamond Conductive Devices and Thermal Management Applications.”
▶Fabi Zhang, Vice Dean of School of Information and Communication, Guilin University of Electronic Technology, presented “Ga₂O₃ Resistive Switching and Rare-Earth Doping Performance.”
▶Ping Wang, Assistant Professor at the School of Physics, Peking University, presented “Emerging Ferroelectric Zn-Metal Nitride Semiconductor Materials and Devices.”
▶Yibo Wang, Associate Professor at Hangzhou Institute, Xi’an University of Electronic Science and Technology, presented “Interface Treatment and Reliability Studies of β-Ga₂O₃ MOSFETs and Diodes.”
▶Wenpeng Zhou, Assistant Professor at Hong Kong University of Science and Technology, presented “Electric Field Management and Dynamic Performance Optimization of Ga₂O₃ Power Transistors.”
▶Jinyang Liu, University of Science and Technology of China, presented “Enhancing Breakdown and Surge Current Capability of β-Ga₂O₃ Schottky Diodes via Ar Plasma Treatment.”
▶Binbin Ding, Xi’an University of Electronic Science and Technology, presented “Oriented Heteroepitaxy of β-Ga₂O₃ (-201) via Magnetron Sputtering.”
▶Yue Wang, University of Science and Technology of China, presented “Effect of Surface Step Morphology on Stacking Fault Formation during AlN Homoepitaxy.”
▶Zelong Fan, Shenzhen University, presented “Aluminum Nitride Micro-Pie Photodetectors for Vacuum Ultraviolet Detection: High Selectivity, Fast Response, and Thermal Stability.”
