【Member News】Based on the Latest Verification Progress of NCT (011) Epiwafers —— Over 3 kV and Ultra-Low leakage Vertical (011) β-Ga₂O₃ Power Diodes

      Recently, Novel Crystal Technology（referred to as NCT） has launched the (011) series of high-quality epitaxial wafer, with significant breakthroughs in their technical indicators. The product has significantly increased the epitaxial thickness from the initial 20 microns to 30 microns, while precisely controlling the carrier concentration of the epitaxial layer within the range of 2-5×10¹⁵ cm^-3. It is particularly worth mentioning that through innovative process technology, this product has successfully reduced the density of epitaxial defect from 80 pcs/cm² to only 5 pcs/cm², reaching the leading level in the industry.

      Experts of Novel Crystal Technology point out that (011) substrate preparation is not difficult, but achieving high-quality preparation of ultra-thick epitaxy faces great challenges. With deep experience and process accumulation in the field of HVPE epitaxy, the NCT team successfully overcame this technical bottleneck, but the difficulty of mass production remains significant. To continue leading industry innovation, NCT has launched research and development efforts on 2-inch, 50-micron thickness epitaxial products, dedicated to providing customers with better solutions.

      The product is priced slightly higher than conventional epitaxial products because of its complex preparation process and the time required to optimize the yield rate. Therefore, the product is mainly targeted at high-end customers who have a solid foundation in research and development and are seeking breakthroughs in device performance. Industry experts generally believe that the launch of this breakthrough epitaxial product will inject strong impetus into the performance improvement of Gallium Oxide power devices and support them to achieve greater breakthroughs in high-end application fields.

      Recently, the verification results of devices based on NCT (011) epitaxial wafer have been released one after another. The following is the latest research achievement released by the research team from Iowa State University in the United States. In the future, more institutions will successively publish the research progress based on this latest epitaxial wafer.

      The development and success of NCT in the Chinese market are closely tied to its key agent in mainland China, Tianjin Wonder-Sino International Trade Co.,Ltd (Wonder-Sino). As NCT’s official partner in mainland China, Wonder-Sino upholds the philosophy of “leading cutting-edge technology and serving industry customers,” focusing on the ultra-wide bandgap Gallium Oxide materials sector. The company provides customers with internationally advanced Gallium Oxide materials and equipment to meet the high-end demands of scientific research, and offers tailored industrialization solutions for enterprises, supporting the broader industrial development of Gallium Oxide.

      Through the professional services and support of Wonder-Sino, NCT's Gallium Oxide products have been able to reach the customers in mainland Chinese mainland more efficiently, promoting in-depth cooperation between the two sides in technology research and development, market promotion, and customer service. At present, the cooperative clients of Wonder-Sino have covered major universities, research institutes and well-known companies. The customer coverage rate in the Gallium Oxide industry is close to 100%, laying a solid foundation for the development of NCT in the Chinese market.

      In the future, NCT will continue to increase its investment in research and development in the field of Gallium Oxide semiconductors and is committed to providing more high-performance and reliable Gallium Oxide devices. At the same time, NCT will work closely with partners such as Wonder-Sino to jointly explore the boundless possibilities of Gallium Oxide materials and contribute to the innovative development of the global semiconductor industry.

      For detailed articles, please click the link to adjust:【International Papers】Over 3 kV and Ultra-Low leakage Vertical (011) β-Ga₂O₃ Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate

      For more information about the products, please contact us through the following information!

      Contact: Mr. Shen 13820576818

      Contact email: st@wonder-sino.com

      Corporate website: www.wonder-sino.com