【Member News】Novel Crystal Technology Announces Participation in the Joint Workshop on Electronic Devices and Semiconductor Power Conversion

      Novel Crystal Technology will present its latest research at the Joint Workshop on Electronic Devices and Semiconductor Power Conversion, to be held in Kanazawa City, Ishikawa Prefecture, Japan, from October 23 (Thu.) to October 24 (Fri.), 2025. The conference will take place at the Kanazawa Chamber of Commerce and Industry (9-13 Oyama-cho, Kanazawa City, Ishikawa Prefecture).

Presentation Information

      ● Date & Time: October 23, 2025 (Thu.) 16:20 – 17:20 (20-minute presentation, including 5 minutes Q&A)

      ● Title: β-Ga₂O₃ Channel MOS Schottky Barrier Diode with Electric Field Strength of 5 mV/cm and Breakdown Voltage of 1844 V

      This work highlights Novel Crystal Technology’s significant progress in the field of β-Ga₂O₃ power devices, underscoring the company’s continuous innovation and breakthroughs in high-voltage, high-performance semiconductor technologies.

Conference Information
      Official website of the Joint Workshop on Electronic Devices and Semiconductor Power Conversion:https://workshop.iee.or.jp/sbtk/cgi-bin/i?s=SBW00009E63&lang=e