【Device Papers】Analysis of the Analog Performance Characteristics of III-Nitride/β-Ga₂O₃ Nano-HEMT for Emerging RF Applications

      Researchers from the BVRIT HYDERABAD College of Engineering for Women have published a dissertation titled "Analysis of the Analog Performance Characteristics of III-Nitride/β-Ga₂O₃ Nano-HEMT for Emerging RF Applications" in Micro and Nanoelectronics Devices, Circuits and Systems.

Abstract

      This research article proposes a 20 nm recessed gate III-nitride Nano-HEMT designed on an improved lattice-matched substrate material of β-Ga₂O₃. The Silvaco Atlas tool is utilized to investigate the analog performance characteristics of the proposed HEMT design. The proposed device is equipped with an Al_0.12Ga_0.88N back barrier feature that strengthens the carrier concentration at GaN/AlGaN junction by raising the conduction band discontinuity. The drop in Al concentration in the back barrier layer led to the complete relaxing of the lattice. It also efficiently reduces the substrate leakage current, improves the analog parameters, and bends the conduction band upwardly convex, improving the two-dimensional electron gas (2DEG) confinement. Furthermore, field-plate arrangement modifies the electric field, adds more feedback capacitance from the drain to gate, and causes a hole current to be suppressed, and the hole depletion area to enlarge. The investigation conducted through simulations demonstrated that the adoption of AlGaN as a back barrier contributed to a noteworthy decrease in leakage current, a positive shift in the threshold voltage (−0.2 V), an improved peak transconductance (622 mS/mm), a transconductance generation factor of 9 V⁻¹, and better intrinsic gain (A_v) and early voltage (V_EA). These excellent findings demonstrate the viability of the proposed Nano-HEMT design for analog applications.

DOI：

https://doi.org/10.1007/978-981-96-3758-4_20