【Member Intro】The 46th Research Institute of China Electronics Technology Group Corporation—— Regular Member

I. Company Profile

      The New Electronic Functional Materials Research and Development Center, which is affiliated with the 46th Research Institute of China Electronics Technology Group Corporation, is the key Laboratory of New Semiconductor Crystal Materials technology of China Electronics Technology Group Corporation. The R&D Center is committed to advancing new electronic functional materials, including wide bandgap semiconductor single crystals and optical crystal materials. With a team of nearly 70 members—over half holding master's or doctoral degrees—the Center boasts strong scientific research capabilities. Equipped with comprehensive facilities for material preparation, processing, and testing, the Center has, for more than a decade, upheld the mission of “Carrying the electronic dream and building the foundation of the industry.” Its dedicated team continues to drive innovation and strives to establish the Center as a leader in the electronic materials industry.

Ii. Introduction to the Gallium Oxide Team

      The Gallium Oxide R&D team of CETC 46th Research Institute was established in 2016. The team consists of over ten members and covers the entire professional process of Gallium Oxide crystal growth, HVPE Gallium Oxide epitaxy, crystal processing and the construction of supporting equipment. This team is the first domestic R&D team to prepare 4-inch and 6-inch Gallium Oxide single crystal using the EFG growth method. Currently, it is now able to supply the scientific research community with a variety of Gallium Oxide single crystal products with different crystal orientations and electrical properties. Based on the solid product foundation of Gallium Oxide single crystal substrates, the team also expanded the research direction of HVPE Gallium Oxide thick film epitaxial wafers in 2020. Over the years, they have achieved breakthroughs in multiple core technologies. The HVPE Gallium Oxide epitaxial wafer developed has been provided to many domestic research institutions for the development of Gallium Oxide -based devices.