【Member News】Fujia Gallium: Gallium Oxide Technology "Breaks the Ice"! Chairman Qi Hongji Analyzes Substrate and Epitaxial Research and Development

Guest Profile

      Qi Hongji, Ph.D., is a second-level researcher at the Shanghai Institute of Optics Fine Mechanics, Chinese Academy of Sciences, a doctoral supervisor, the director of the Hangzhou Institute of Optics and Fine Mechanics, and the chairman of Hangzhou Fujia Gallium Technology Co., LTD. He is an expert in the field of optoelectronic functional materials. He has presided over more than 20 national-level scientific research projects, published over 150 SCI papers, and obtained nearly 100 authorized invention patents, including 16 international authorized patents. He has received the second prize for scientific and technological progress of the military and other scientific and technological awards. In the field of ultra-wide band gap semiconductor Gallium Oxide materials, he has undertaken the military-civilian Integration Special Project of the National Development and Reform Commission, the Key Research and Development Plan of the Gallium Oxide field of the Ministry of Science and Technology, and the high-quality Development Special Project of the Ministry of Industry and Information Technology. He has achieved a series of internationally leading results in Gallium Oxide single crystal equipment, single crystal growth process development, high-quality epitaxial growth and device verification. Featured in the People's Daily, Xinhua News Agency, China Securities Journal, The Paper and other well-known media outlets.

Speech Summary

      1. Design ideas for active thermal fields in the process of technological research and development of Gallium Oxide single crystal materials

      2. Breakthroughs in "One-Click Crystal Growth" and intelligent crystal growth technology

      3. Advances in MOCVD and MBE homoepitaxy technology

      4. The latest results obtained in the verification of Gallium Oxide epitaxial material devices