【Device Papers】Radiation Response of Ga₂O₃ MOSFETs Probed via Focused Particle Beams

      Researchers from the Sandia National Laboratories Sandia National Laboratories have published a dissertation titled "Radiation Response of Ga₂O₃ MOSFETs Probed via Focused Particle Beams" in Advanced Materials Technologies.

Abstract

      Gallium Oxide (Ga₂O₃), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga₂O₃ Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. This research enhances the understanding of Ga₂O₃ MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

DOI：

https://doi.org/10.1002/admt.202500569