【Member News】 Zhang Hui, Chairman of Hangzhou GAREN: Driving Gallium Oxide into the Era of Large-Scale Applications with the “New Casting Method”

Guest Introduction

      Professor Zhang Hui is the Chairman of Hangzhou GAREN SEMI Co., Ltd., and holds dual appointments as a Professor at both the State Key Laboratory of Silicon and Advanced Semiconductor Materials at ZJU-Hangzhou Global Scientific and Technological Innovation Center. He is also a doctoral supervisor. In response to the urgent demand for materials in power devices, he has carried out research on melt growth of Gallium Oxide single crystals, defect control, crystal processing, and doping. He has published a series of papers in internationally renowned journals such as Chemical Society Reviews, Journal of the American Chemical Society, Nano Letters, Advanced Materials, and Angewandte Chemie International Edition. In 2007, he was nominated for the National Top 100 Excellent Doctoral Dissertation Award. In 2008, he won the First Prize of the Zhejiang Provincial Science and Technology Award (third place), and in 2013, he received the Second Prize of the State Natural Science Award (second place). He was selected for the “National Ten Thousand Talents Program – Youth Top Talent” in 2014, and in 2015, he was awarded the National Science Fund for Excellent Young Scholars.

Speech Summary

      1. Gallium Oxide offers outstanding performance and low cost, making it an ultra-wide bandgap semiconductor material with broad application prospects across various fields. The melt-growth method provides a clear advantage for mass production.

      2. Conventional crystal growth techniques are constrained in large-scale applications due to the high cost associated with extensive use of iridium.

      3. The newly developed casting method significantly reduces iridium consumption, enabling the growth of large-sized, high-quality single crystals and achieving small-batch production, thereby advancing industrial development.