【Device Papers】Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors

      Researchers from the Peking University and Huazhong University of Science and Technology have published a dissertation titled "Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors" in EDTM 2025.

Abstract

      In this work, an oxygen-rich surface passivation process was applied to ALD IGZO transistors, effectively reducing the oxygen vacancy density within the channel while maintaining a relatively low contact resistance. The dual-gate transistors with improved electrostatic control capability demonstrate boosted performance compared to the back-gate transistors, achieving a record-high Ion of 2.24 mA/μm and gm of over 1 mS/μm for 50 nm short-channel device at V_ds = 1 V, the highest values among IGZO transistors.

DOI：

https://doi.org/10.1109/EDTM61175.2025.11040472