【Substrate Papers】Size Up Challenge of beta-Ga₂O₃ Crystal Growth with Cold Container Called OCCC Method

      Researchers from the Tohoku University have published a dissertation titled "Size Up Challenge of beta-Ga₂O₃ Crystal Growth with Cold Container Called OCCC Method" in PCIM Conference 2025.

Abstract

      The Baliga figure of merit for β-Ga₂O₃ is much higher than SiC, making it a promising power semiconductor. However, high costs and defect density, mainly due to the use of expensive precious metal crucibles, limit its development. We report on large-size bulk crystal growth using the Oxide Crystal growth from Cold Crucible (OCCC) method, which eliminates the need for metal crucibles. Growth was achieved with a basket size of 100-150mm under normal air atmosphere. Though it become partly poly crystal method produced large crystals of around 70mm diameter, showing the potential for large single-crystal growth.

DOI：

https://doi.org/10.30420/566541134