【Epitaxy Papers】Silicon Doping in Amorphous Gallium Oxide Films by Plasma-Enhanced Atomic Layer Deposition for Dielectric and Optoelectronic Applications

      Researchers from the Fudan University have published a dissertation titled "Silicon Doping in Amorphous Gallium Oxide Films by Plasma-Enhanced Atomic Layer Deposition for Dielectric and Optoelectronic Applications" in EDTM 2025.

Abstract

      Gallium oxide is a representative of the fourth-generation semiconductor. The silicon doping of gallium oxide plays a crucial role in optimizing performance, with PEALD as a viable deposition technique due to the advantages of high coverage and precise composition control. In this study, various compositions of amorphous Si-doped gallium oxide thin films were first deposited via PEALD with systematic characterizations. Subsequently, the electrical and optical characterizations were performed incorporating subcycle ratio and Si concentration analysis, paving the way for dielectric and optoelectronic applications of the amorphous Si−GaO_x thin film.

DOI：

https://doi.org/10.1109/EDTM61175.2025.11040681