【Epitaxy Papers】Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga₂O₃  films

      Researchers from the Saga University have published a dissertation titled "Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga₂O₃ films" in Journal of Crystal Growth.

Abstract

      This study presents the growth of terbium (Tb) doped Ga₂O₃ films using oxygen plasma-assisted pulsed laser deposition (PLD). The effects of substrate temperatures, varied from 100 ℃ to 500 ℃, on the structural and optical properties of the films were systematically investigated. X-ray diffraction analysis revealed that the use of oxygen plasma significantly enhances the crystalline quality of (−201)-oriented Ga₂O₃ films compared to those grown by conventional PLD without plasma assistance. Notably, the incorporation of oxygen plasma enabled the formation of crystalline Tb doped Ga₂O₃ at a reduced substrate temperature of 300 °C, ensured more stable growth rates, and enhanced both optical and luminescent properties. These results highlight the potential of plasma-assisted PLD as a viable approach for fabricating high-quality Ga₂O₃ films at low temperatures, paving the way for advanced electronic and optoelectronic devices compatible with conventional Si-based integrated circuits.

DOI：

https://doi.org/10.1016/j.jcrysgro.2025.128290