【Member News】Fuyang District Party Secretary Wang Jian Visited Fujia Gallium Industry Research Guidance

      In the wave of industrial change driven by scientific and technological innovation, the science and technology enterprises in Fuyang District are developing vigorously, becoming a new engine of regional economic growth. On the afternoon of April 1, Wang Jian, Secretary of the Fuyang District Party Committee, led a team to visit the first 6-inch Gallium Oxide single crystal and epitaxy film growth line of Hangzhou Fujia Gallium Technology Co., Ltd. in China to gain an in-depth understanding of Fujia's innovation achievements and development plans in the field of Gallium Oxide, injecting new impetus to promote the regional science and technology industry upgrade.

      Secretary Wang Jian first came to the exhibition hall of Fujia Gallium, the Chairman Qi Hongji personally introduced the unique advantages of Gallium Oxide materials. "Power electronic devices prepared by Gallium Oxide can withstand higher voltage, higher current, with lower on-loss, known as the" fourth generation "semiconductor materials, industry development prospects are broad, has become the global competitive layout of the strategic highland." Qi Hongji introduced to Secretary Wang, "Hangzhou Fujia Gallium is currently the only company in the country with a 6-inch single crystal growth and epitaxy. The production line is highly integrated with single crystal growth, substrate processing, epitaxy and testing. Upon completion of the project, the production line will have an annual production capacity of 10,000 6-inch Gallium Oxide single crystal and epitaxy films. The whole production line involves "one-click crystal growth" single crystal growth equipment, multi-line cutting equipment, high-precision grinding and polishing equipment, chamfer equipment, laser processing equipment, fully automated chip cleaning equipment, high-flux epitaxial equipment, surface defect detector, electrical performance tester and other key equipment. Going forward, the 6-inch Gallium Oxide single crystal and the epitaxial wafer will provide downstream device manufacturers with stable and controllable high-quality Gallium Oxide materials."

      Subsequently, Secretary Wang visited the workshop of Gallium Oxide single crystal and epitaxial wafer production processes, and expressed appreciation for the advanced production equipment and rigorous process. During the visit, Mr. Wang inquired in detail about the company's technology development, talent development, and market development, and had an in-depth exchange with company leaders on current industry trends and challenges.

      Mr. Wang was impressed by Fujia's achievements in technological innovation. The company not only took the lead in preparing 6-inch thick single crystal substrate, but also reached the threshold of industrialization of semiconductor device process line. In the international advanced layout of artificial intelligence single crystal growth and epitaxy technology related patents, the first to launch EFG "one-click crystal growth" equipment, to solve the equipment obstacles in the process of single crystal material industrialization, laying the foundation for single crystal industrialization; In the use of MOCVD and MBE technology to prepare epitaxial film, also took the lead in obtaining industry partners device performance verification.

      Mr. Wang gave full affirmation to the development of Fujia Gallium and said that the District Party Committee and District Government will continue to support the company's innovation and development, and provide better service and policy support for the company. He encouraged enterprises to continue to increase investment in research and development, attract more high-end talents, continuously improve core competitiveness, continue to cultivate in the field of Gallium Oxide, promote the transformation and industrial application of scientific and technological achievements, and make greater contributions to the development of Fuyang's science and technology industry.

      The visit and research of the secretary of the District Party Committee not only reflects the great importance of the Fuyang District government to scientific and technological innovation enterprises, but also instill strong confidence in the development of science and technology enterprises such as Fujia Gallium. It is believed that with the strong support of the government and the unremitting efforts of the enterprise itself, the Fujia Gallium will make more brilliant achievements in the field of Gallium Oxide and promote the high-quality development of regional economy.

About Fujia Gallium:

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. And obtained ISO9001 Quality Management System Certification in 2025 (No. 20225Q20294R0M) It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 3 software copyrights (crystal growth control software).