【Domestic News】The First SEMICON China Compound Semiconductor Asia Conference Successfully Held 4 Branches!

      Following the opening keynote speech on the 25th, the Compound Semiconductor Asia Conference held four more branches on the 26th and 27th.

      Session 1, held on the morning of March 26, focused on ultra-wide band gap semiconductor materials, hosted by Pei Yi, Vice President of Suzhou Ningxun Gaoneng Semiconductor Co., Ltd.

      Wu Liang, CEO of Ultratrend Technologies Inc., and Ian, chief scientist of Element-6 Friel, Chen Zhengwei, CEO of Beijing MIG Semiconductor Co., Ltd., Zhang Xing, CEO of Compound Semiconductor (Xiamen) Technology Co., Ltd, and Jiang Jile, vice president of Beijing TSD Semiconductor Co., Ltd., have made special reports such as " Recent Progress and Device Prospects on Bulk AlN Crystals Grown by PVT Method" and " Advanced CVD Diamond Solutions for Next-generation Semiconductor Device Performance”., " The Current Industrial Situation and Prospects of The Development of The 4th Generation Semiconductor Ga₂O₃ ", " Progress of Ultra-Wideband Diamond Semiconductor Material and Devices Research " and " Research Progress on Precision Polishing of Diamond Materials ". The forum focused on the preparation technology, performance optimization and industrial application of cutting-edge materials such as Aluminum Nitride, Gallium Oxide and Diamond, and looked forward to the future development of fourth-generation semiconductor technology.

      On the afternoon of March 26, Session 2 focused on: Innovative Technology of compound semiconductors, presided by Wang Ronghua, Vice general manager of Technology, Runxin Microelectronics (Dalian) Co., LTD.

      Mr. Poshun CHIU, Senior Analyst of Yole Group, Mr. Jiang Jiwei, co-founder of Hangzhou GAREN SEMI Co., LTD., Mr. Li Shiqun, General Manager of Compound Semiconductor Industry of Beijing NAURA Microelectronics Equipment Co., LTD., Mr. Ren Jie, General Manager and CEO of Gazer Semiconductor Tech Co., Ltd., Mr. Matthew, Senior Director of Product Line Management of Veeco Instruments Inc., ALLOS SEMICONDUCTOR CTO Nishikawa Atsushi, Pan Hongming, CMP Technology Application and Development Manager, GEGV Technology Co., Ltd., Martyn Green, DCA Instruments Oy Asia Sales Director, Has made "Overview of Compound Semiconductors and The Outlook for Innovation in WBG and UWBG Technologies", "Progress of Large-scale and High-quality Gallium Oxide Single Crystal Semiconductor Materials", "Promoting The Thriving Development of The Third-generation Semiconductor Industry through Equipment Innovation", "FTIR Technology and Equipment for Compound Semiconductor Concentration Measurement", "Novel Techniques for Production Molecular Beam Epitaxy", "Precise Strain-engineering of 300 mm GaN-on-Si Micro LED Epiwafer to Open The Path to Silicon Industry Fabs", CMP Solutions for High Quality SiC Substrate and Device Fabrication" and "Production Processing of 300mm BTO Films on Silicon, For Photonic Applications" special reports. Focusing on the whole industrial chain of compound semiconductors, the forum systematically discussed the technological collaborative innovation of material-process-equipment-application, highlighting the leading role of wide band gap technology in the next generation semiconductor industry reform.

      The topic of Session 3 held on the morning of March 27th was III-V compound Semiconductor, moderated by Yuan Yikong, Chairman of Suzhou Hanhua Semiconductor Co., LTD.

      Lin Jiafu, Chief Technology Officer of Wavetek Microelectronics Co., LTD., Li Shunfeng, Executive Director of Suzhou Everbright Institute of Semiconductor Lasers Co., LTD., Xue Yinfei, Group Vice President of Shanghai FeedliTech Co.,Ltd., Gao Wei, Chief Technology Officer of Business Development, AXT, Inc, and Zhang Yu, Professor of IOS, CAS, has made the "Journey through The Frequency Domain-Compound Semiconductor", "Research and Development on High Power Semiconductor Edge and Surface Emitting Lasers", "An Introduction to The Reliability Test & Verification Technology for Compound Semiconductor and Integrated Circuit", "Scaling Compound Semiconductor Materials for Future Markets" and "Research Progress on Antimonide Lasers" special reports. The forum system discussed the technical innovation and industrial practice of III-V compound semiconductor in high frequency, optoelectronics, reliability, scale and other dimensions.

      Session 4 on the afternoon of 27th focused on Gallium Nitride, Silicon Carbide materials, equipment and power device applications, hosted by Ma Tiezhong, CEO of AK Optics Technology Co., Ltd.

      Chen Xianglong, Deputy General Manager of Qingdao SRI I Intellectual Technology Co., Ltd, Guy Moxey, Vice President of Power Device Development at Wolfspeed, Dr. Charles Chen of Onto Innovation,Inc., Mr. Yan Jinguang, Senior Technical Training Manager at Power Integrations, Mr. David Haynes, Vice President of Specialty Processes and Strategic Marketing at Panlin Group, Mr. Francesco MUGGERI, Vice President for Power Discrete and Analog Products, China, STMicroelectronics, Mr. Koya Shimizu, President of SICOXS Co., LTD and Liu Chunjun, CTO, Beijing Tankeblue Semiconductor Company, have made " Dual Engines for Power and Compound Semiconductor Manufacturing: Innovations in Atomic Layer Deposition and Ion Implantation ", " The Enabling Impact of Silicon Carbide Today and Tomorrows New Horizons", " High Sensitivity & Throughput Defect Inspection Technologies for SiC and GaN Power Technologies", " Will SiC Survive The Emergence of Super-High Voltage GaN? ", " Preparing for GaN Device Manufacturing at 300mm ", " Innovative Semiconductors: The Key to Power-Efficient and Cost-Effective Solutions ", " Proposal for Solving Problems Using 4H-SiC Bonded Substrate " and " Closing Keynote：Recent Progress of 200 mm SiC Crystal Growth and Homoepitaxy " special reports. The forum in-depth analyzed the technological breakthroughs and industrial competition and cooperation of wide band gap semiconductor (GaN/SiC) in the four dimensions of materials, processes, equipment and applications, and the collaborative innovation of the two jointly drives the evolution of power semiconductors to high efficiency, integration and low cost.